Author Affiliations
Abstract
1 State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
3 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Silica planar lightwave circuit (PLC) devices can offer great potential for quantum key distribution (QKD) with benefits of low-loss, low-cost, large-scale integration, miniaturization, stability and mass production. A complementary encoding-decoding system for QKD based on silica PLC technology was demonstrated, achieving two channels that have balanced outputs simultaneously. This system is consisted of two chips, and each chip is consisted of a variable optical splitter (VOS), an asymmetric Mach-Zehnder interferometer (AMZI) with a thermo-optic phase modulator (TOPM), a delay line (DL), and a directional coupler (DC). The measured delay times of pulse-pairs for two chips are 396 ps and 398 ps, respectively, and the system has shown relatively high interference visibility (IV) of 93.5% and 91.3% for two channels, respectively.
光电子快报（英文版）
2021, 17(10): 592
1 中国科学院半导体研究所集成光电子学国家重点实验室, 北京 100083
2 河南仕佳光子科技股份有限公司河南省光电芯片与集成重点实验室, 河南 鹤壁 458030
数据中心光互连正朝着高速方向发展。针对数据中心光互连过程,采用折射率差为1.5%的石英基二氧化硅光波导,设计并制备了光电集成的小型化、低损耗、小输出模场的四通道粗波分解复用芯片,该芯片满足高速数据中心200 Gbit·s -1/400 Gbit·s -1的传输速率要求,最小插入损耗小于1.07 dB,1 dB带宽大于13.7 nm,3 dB带宽大于16.1 nm,偏振相关损耗小于0.08 dB,相邻串扰大于24 dB,非相邻串扰大于30 dB。所设计的芯片完全满足高速数据中心光互连的波分复用芯片商用要求。
光学器件 粗波分解复用 数据中心光互连 石英基
Author Affiliations
Abstract
1 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3 Division of Quantum Materials and Devices, Beijing Academy of Quantum Information Sciences, Beijing 100193, China
4 Laboratory of Quantum Information, CAS, University of Science and Technology of China, Hefei 230026, China
Quantum key distribution (QKD) provides a solution for communication of unconditional security. However, the quantum channel disturbance in the field severely increases the quantum bit-error rate, degrading the performance of a QKD system. Here we present a setup comprising silica planar light wave circuits (PLCs), which is robust against the channel polarization disturbance. Our PLCs are based on the asymmetric Mach–Zehnder interferometer (AMZI), integrated with a tunable power splitter and thermo-optic phase modulators. The polarization characteristics of the AMZI PLC are investigated by a novel pulse self-interfering method to determine the operation temperature of implementing polarization insensitivity. Over a 20 km fiber channel with 30 Hz polarization scrambling, our time-bin phase-encoding QKD setup is characterized with an interference fringe visibility of 98.72%. The extinction ratio for the phase states is kept between 18 and 21 dB for 6 h without active phase correction.
Photonics Research
2021, 9(2): 02000222
1 河南仕佳光子科技股份有限公司, 河南 鹤壁 458030
2 郑州大学物理学院, 河南 郑州 450001
设计制备了一种低功耗的马赫-曾德尔干涉仪(MZI)型聚合物热光开关器件,为降低开关的功耗,将器件加热区的调制臂波导设计成悬浮波导,从而抑制波导芯区处热量向硅衬底的扩散。模拟结果显示,相比于传统波导结构的热光开关,悬浮波导结构可以明显减少热扩散。利用半导体工艺成功制备了具有悬浮波导结构的热光开关器件,在1550 nm工作波长下,热光开关的功耗为9.3 mW,消光比为21 dB,开关的上升和下降时间分别为392 μs和697 μs。
集成光学 集成光学器件 热光开关 聚合物波导 功耗 消光比
1 北京信息科技大学 光纤传感与系统北京实验室，北京 100016
2 中国科学院半导体研究所 集成光电子学国家重点实验室，北京 100083
3 中国科学院大学 材料与光电研究中心，北京 100049
刻蚀衍射光栅作为波分复用/解复用器件，有望在光通信系统中得到广泛应用。在基于顶层硅厚度为220 nm的绝缘体上硅材料上设计并制作了一种新型刻蚀衍射光栅，该刻蚀衍射光栅引入六角晶格空气孔型光子晶体作为其反射镜。模拟结果显示，相较于传统的阶梯光栅反射镜的刻蚀衍射光栅，光子晶体反射镜的刻蚀衍射光栅在理论上可有效降低器件的制作工艺难度以及插入损耗，同时可以实现器件偏振的保持。随后仅利用一步电子束光刻工艺及一步电感耦合等离子体刻蚀工艺制作了该光子晶体反射镜的刻蚀衍射光栅。测试结果表明：该光子晶体反射镜的刻蚀衍射光栅片上损耗为9.51~11.86 dB，串扰为5.87~8.72 dB，后续可通过优化工艺条件和优化输出波导布局，进一步提高器件的性能。
刻蚀衍射光栅 光子晶体 硅基光子学 波分复用/解复用 etching diffraction grating photonic crystal silicon photonics wavelength division multiplexing/de-multiplexing 红外与激光工程
2019, 48(9): 0916005
1 北京信息科技大学 光纤传感与系统北京实验室, 北京 100016
2 中国科学院半导体研究所 集成光电子学国家重点实验室, 北京 100083
3 中国科学院大学 材料与光电研究中心, 北京 100049
波分复用/解复用器与可调光衰减器的是光通信系统中的重要元器件。为了得到制备工艺简单、响应速度快的二者的单片集成芯片, 并且考虑到其与其他不同光器件的集成可能性, 在绝缘体上硅材料制作了16通道、信道间隔200 GHz的阵列波导光栅复用/解复用器与电吸收型可调光衰减器的单片集成。该器件的片上损耗小于7 dB, 串扰小于-22 dB。电吸收型VOA在20 dB的衰减量下的功耗为572 mW(106 mA, 5.4 V)。此外, 该器件可以实现光功率的快速衰减, 在0~5 V的外加方波电压下, VOA上升及下降时间分别为50.5 ns和48 ns。
阵列波导光栅 可调光衰减器 硅基光子学 绝缘体上硅 arrayed waveguide grating variable optical attenuator silicon photonics silicon on insulator 红外与激光工程
2019, 48(8): 0818004
Author Affiliations
Abstract
1 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
A high-performance monolithic integrated wavelength division multiplexing silicon (Si) photonics receiver chip is fabricated on a silicon-on-insulator platform. The receiver chip has a 25-channel Si nanowire-arrayed waveguide grating, and each channel is integrated with a high-speed waveguide Ge-on-Si photodetector. The central wavelength, optical insertion loss, and cross talk of the array waveguide grating are 1550.6?nm, 5–8?dB, and ?12–?15??dB, respectively. The photodetectors show low dark current density of 16.9??mA/cm2 at ?1??V and a high responsivity of 0.82?A/W at 1550?nm. High bandwidths of 23 and 29?GHz are achieved at 0 and ?1??V, respectively. Each channel can operate at 50?Gbps with low input optical power even under zero bias, which realizes an aggregate data rate of 1.25?Tbps.
Photonics Research
2019, 7(6): 06000659
1 中国科学院半导体研究所集成光电子学国家重点联合实验室, 北京 100083
2 中国科学院大学材料科学与光电技术学院, 北京 100049
论述了光学相控阵的原理,回顾了光学相控阵的发展历程,特别是近年来硅光子相控阵的研究进展。利用与互补金属氧化物半导体(CMOS)工艺线相兼容的绝缘体上硅(SOI)技术实现了大规模的集成,目前国外报道的最大的硅光子相控阵集成了4096个阵元。在硅光子上实现的二维光束扫描角度可以达到46°×36°,光束宽度只有0.85°×0.18°,天线的损耗小于3 dB,且旁瓣抑制大于10 dB。此外,采用微机电系统(MEMS)器件实现的光学相控阵的光束扫描速度超过0.5 MHz。阐述了各种方式实现光学相控阵的优缺点,并对未来发展前景进行了展望。最后,介绍了光学相控阵在激光雷达、成像、**上的应用。
光学器件 光波导 光学相控阵 扫描角度 绝缘体上硅 激光与光电子学进展
2018, 55(2): 020006
